CHEMISTRY GLOSSARY

electrical double layer    →   električni dvosloj

Electrical double layer is the structure of charge accumulation and charge separation that always occurs at the interface when an electrode is immersed into an electrolyte solution. The excess charge on the electrode surface is compensated by an accumulation of excess ions of the opposite charge in the solution. The amount of charge is a function of the electrode potential. This structure behaves essentially as a capacitor. There are several theoretical models that describe the structure of the double layer. The three most commonly used ones are the Helmholtz model, the Gouy-Chapman model, and the Gouy-Chapman-Stern model.

electric cell    →   električni članak

Electric cell (battery) is a device that is capable of changing some form of energy, such as chemical, nuclear or radiant energy, into electricity. A solar cell, for example, consists of a semiconductor junction that converts sunlight directly into electricity. A dry cell battery converts chemical energy into electricity.

resistance    →   električni otpor

Electrical resistance (R) of a given object is the opposition to the passage of an electric current through that object. The SI unit of electrical resistance is the ohm, represented by the Greek letter omega (Ω). Resistance is the electric potential difference divided by the current when there is no electromotive force in the conductor. This definition applies to direct current. For a conductor of uniform cross section with area A and length L, and whose resistivity is ρ, the resistance is given by

electrical current    →   električna struja

Electrical current is a flow of electric charges. The SI unit of electric current is the ampere (A).

electric field    →   električno polje

If a small amount of charge experience a force, there is an electric field in the vicinity. Electric field E is defined in terms of electrostatic force F that would be exerted on positive test charge q_p placed in the field:

SI unit for electric field is N C^-1, or V m^-1.

The electric field due to a point charge q at distance r from it given by:

where ε₀ is permittivity constant, and is ε_o=8.85×10^-12 C² N^-1 m^-2.

resistivity    →   električna otpornost

Electrical resistivity, or specific resistance (ρ) is the electric field strength divided by the current density when there is no electromotive force in the conductor. Resistivity is an intrinsic property of a material. Materials with low resistivity are good conductors of electricity and materials with high resistivity are good insulators.

For a conductor of uniform cross section with area A and length L, and whose resistance is R, the resistivity is given by

The SI unit is Ω m.

accelerator    →   akcelerator

Accelerator is a device (machine) used for acceleration of charged particles (protons, deuterons, α-particles). Particles are accelerated under the influence of an electric field and with the help of a magnetic field are kept inside a certain space. When the particles reach enough acceleration (that is sufficient energy), they are directed on a target we wish to bomb. Best known types cyclotron, synchrotron, betatron.

Accelerator is a substance that increases the rate of chemical reaction, i.e. a catalyst.

accumulation    →   akumulacija

Accumulation (Lat. accumulatio) is storage of matter or energy.

accumulator    →   akumulator

Accumulator (secondary cell, storage battery) is a type of voltaic cell or battery that can be recharged by passing current through it from an external D.C. supply. The charging current reverses the chemical reactions in the cell. The common types are the lead-acid accumulator and the nickel-cadmium cell.

Acheson process    →   Achesonov proces

Acheson process is an industrial process to synthesize graphite and silicon carbide (carborundum), named after its inventor the American chemist Edward Goodrich Acheson (1856-1931). In this process, a solid-state reaction between pure silica sand (SiO₂) and petroleum coke (C) at very high temperature (more than 2500 °C) leads to the formation of silicon carbide under the general reaction:

While studying the effects of high temperature on carborundum, Acheson had found that silicon vaporizes at about 4150 °C, leaving behind graphitic carbon.